Infineon ISC Type N-Channel Power Transistor, 170 A, 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩14,694.08

Add to Basket
수량 선택 또는 입력
재고있음
  • 5,000 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
한팩당*
2 - 18₩7,347.04₩14,695.96
20 - 198₩6,619.48₩13,238.96
200 - 998₩6,098.72₩12,197.44
1000 - 1998₩5,662.56₩11,323.24
2000 +₩5,068.48₩10,136.96

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-139
제조사 부품 번호:
ISC032N12LM6ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

120V

Series

ISC

Package Type

PG-TDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

33nC

Maximum Power Dissipation Pd

211W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), which reduces conduction losses and improves performance. The transistor boasts an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching characteristics. Additionally, it offers very low reverse recovery charge (Qrr), minimizing switching losses.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

관련된 링크들