제조사부품번호

Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

RS 제품 번호:: 230-8430
제조사 부품 번호:: AS4C4M16SA-6TIN
제조업체:: Alliance Memory

Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩21,074.80

재고있음

추가로 2025년 12월 29일 부터 95 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩4,214.96	₩21,074.80
10 - 20	₩4,087.12	₩20,435.60
25 - 45	₩3,963.04	₩19,815.20
50 - 70	₩3,842.72	₩19,213.60
75 +	₩3,729.92	₩18,649.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-8430
제조사 부품 번호:: AS4C4M16SA-6TIN
제조업체:: Alliance Memory

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Alliance Memory
	Memory Size	64Mbit
	SDRAM Class	DDR
	Organisation	4M x 16
	Data Rate	200MHz
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5.4ns
	Number of Words	4M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Width	10.29mm
	Maximum Operating Supply Voltage	3.6 V
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	3 V
	Maximum Operating Temperature	+85 °C

	모두 선택
	브랜드 Alliance Memory
	Memory Size 64Mbit
	SDRAM Class DDR
	Organisation 4M x 16
	Data Rate 200MHz
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5.4ns
	Number of Words 4M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Width 10.29mm
	Maximum Operating Supply Voltage 3.6 V
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 3 V
	Maximum Operating Temperature +85 °C

Datasheet - AS4C4M16SA-6TIN

The Alliance Memory 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Fast access time from clock: 4.5/5.4/5.4 ns
Fast clock rate: 200/166/143 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank

Alliance Memory AS4C4M16SA-6TIN, SDRAM 64Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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