제조사부품번호

Alliance Memory SDRAM 128 MB Surface, 54-Pin 16 bit TSOP

RS 제품 번호:: 230-8438
제조사 부품 번호:: AS4C8M16SA-6TIN
제조업체:: Alliance Memory

Alliance Memory SDRAM 128 MB Surface, 54-Pin 16 bit TSOP

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대량 구매 할인 기용 가능

Subtotal (1 tray of 108 units)*

₩521,609.76

일시적 품절

2026년 4월 13일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tray*
108 - 216	₩4,829.72	₩521,568.40
324 - 432	₩4,707.52	₩508,513.68
540 - 972	₩4,613.52	₩498,341.00
1080 - 1944	₩4,521.40	₩488,392.04
2052 +	₩4,431.16	₩478,625.44

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-8438
제조사 부품 번호:: AS4C8M16SA-6TIN
제조업체:: Alliance Memory

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Alliance Memory
	Memory Size	128MB
	Product Type	SDRAM
	Organisation	8M x 16 Bit
	Data Bus Width	16bit
	Address Bus Width	12bit
	Maximum Clock Frequency	166MHz
	Number of Bits per Word	16
	Maximum Random Access Time	5ns
	Number of Words	2M
	Mount Type	Surface
	Package Type	TSOP
	Minimum Operating Temperature	-40°C
	Pin Count	54
	Maximum Operating Temperature	85°C
	Series	AS4C8M16SA
	Width	8.1 mm
	Height	1.2mm
	Standards/Approvals	No
	Length	22.35mm
	Automotive Standard	No
	Minimum Supply Voltage	3V
	Maximum Supply Voltage	3.6V

	모두 선택
	브랜드 Alliance Memory
	Memory Size 128MB
	Product Type SDRAM
	Organisation 8M x 16 Bit
	Data Bus Width 16bit
	Address Bus Width 12bit
	Maximum Clock Frequency 166MHz
	Number of Bits per Word 16
	Maximum Random Access Time 5ns
	Number of Words 2M
	Mount Type Surface
	Package Type TSOP
	Minimum Operating Temperature -40°C
	Pin Count 54
	Maximum Operating Temperature 85°C
	Series AS4C8M16SA
	Width 8.1 mm
	Height 1.2mm
	Standards/Approvals No
	Length 22.35mm
	Automotive Standard No
	Minimum Supply Voltage 3V
	Maximum Supply Voltage 3.6V

Datasheet - AS4C8M16SA-6TIN

The Alliance Memory 128Mb SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

Auto Refresh and Self Refresh

4096 refresh cycles/64ms

CKE power down mode

Single +3.3V  0.3V power supply

Interface: LVTTL

Alliance Memory SDRAM 128 MB Surface, 54-Pin 16 bit TSOP

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