제조사부품번호

Alliance Memory AS4C32M16SB-7TIN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

RS 제품 번호:: 230-8427
제조사 부품 번호:: AS4C32M16SB-7TIN
제조업체:: Alliance Memory

Alliance Memory AS4C32M16SB-7TIN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

대량 구매 할인 기용 가능

Subtotal (1 tray of 108 units)*

₩2,048,470.56

일시적 품절

2026년 3월 10일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tray*
108 - 216	₩18,967.32	₩2,048,470.56
324 - 432	₩18,587.56	₩2,007,477.16
540 - 972	₩18,215.32	₩1,967,335.40
1080 +	₩17,852.48	₩1,927,987.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-8427
제조사 부품 번호:: AS4C32M16SB-7TIN
제조업체:: Alliance Memory

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Alliance Memory
	Memory Size	512Mbit
	Organisation	32M x 16
	SDRAM Class	DDR
	Data Rate	200MHz
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5.4ns
	Number of Words	32 M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Minimum Operating Supply Voltage	3 V
	Width	10.29mm
	Maximum Operating Supply Voltage	3.6 V
	Maximum Operating Temperature	+85 °C
	Minimum Operating Temperature	-40 °C

	모두 선택
	브랜드 Alliance Memory
	Memory Size 512Mbit
	Organisation 32M x 16
	SDRAM Class DDR
	Data Rate 200MHz
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5.4ns
	Number of Words 32 M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Minimum Operating Supply Voltage 3 V
	Width 10.29mm
	Maximum Operating Supply Voltage 3.6 V
	Maximum Operating Temperature +85 °C
	Minimum Operating Temperature -40 °C

Datasheet - AS4C32M16SB-7TIN

The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Auto Refresh and Self Refresh
8192 refresh cycles/64ms
CKE power down mode
Single +3.3V ±0.3V power supply

Alliance Memory AS4C32M16SB-7TIN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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