Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8
- RS 제품 번호:
- 273-2794
- 제조사 부품 번호:
- IPT029N08N5ATMA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩67,285.20
재고있음
- 추가로 2025년 12월 29일 부터 82 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 48 | ₩33,642.60 | ₩67,285.20 |
| 50 - 98 | ₩32,636.80 | ₩65,273.60 |
| 100 - 248 | ₩31,988.20 | ₩63,976.40 |
| 250 - 998 | ₩31,349.00 | ₩62,698.00 |
| 1000 + | ₩30,719.20 | ₩61,438.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2794
- 제조사 부품 번호:
- IPT029N08N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1, IEC61249-2-21 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
100 percent avalanche tested
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