제조사부품번호

Infineon IPT0 Type N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1

RS 제품 번호:: 351-908
제조사 부품 번호:: IPT023N10NM5LF2ATMA1
제조업체:: Infineon

Infineon IPT0 Type N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,491.20

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
2 - 18	₩7,745.60	₩15,491.20
20 - 198	₩6,974.80	₩13,949.60
200 - 998	₩6,429.60	₩12,859.20
1000 - 1998	₩5,969.00	₩11,938.00
2000 +	₩5,348.60	₩10,697.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 351-908
제조사 부품 번호:: IPT023N10NM5LF2ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	243A
	Maximum Drain Source Voltage Vds	100V
	Series	IPT0
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	144nC
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified
	Width	10.1 mm
	Height	2.40mm
	Length	10.58mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 243A
	Maximum Drain Source Voltage Vds 100V
	Series IPT0
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 144nC
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified
	Width 10.1 mm
	Height 2.40mm
	Length 10.58mm
	Automotive Standard No

Datasheet - IPT023N10NM5LF2ATMA1

COO (Country of Origin):: AT

The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).

Wide safe operating area (SOA)

Low RDS(on)

Lower IGSS compared to Linear FET

Optimized transfer characteristic

Infineon IPT0 Type N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1

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