Infineon IPT0 Type N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1

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₩15,487.44

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한팩당*
2 - 18₩7,743.72₩15,487.44
20 - 198₩6,974.80₩13,947.72
200 - 998₩6,433.36₩12,864.84
1000 - 1998₩5,963.36₩11,926.72
2000 +₩5,350.48₩10,699.08

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
351-908
제조사 부품 번호:
IPT023N10NM5LF2ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

243A

Maximum Drain Source Voltage Vds

100V

Package Type

PG-HSOF-8

Series

IPT0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

144nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

2.40mm

Standards/Approvals

RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified

Width

10.1 mm

Length

10.58mm

Automotive Standard

No

COO (Country of Origin):
AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).

Wide safe operating area (SOA)

Low RDS(on)

Lower IGSS compared to Linear FET

Optimized transfer characteristic

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