STMicroelectronics Type N-Channel MOSFET, 10 A, 800 V Enhancement, 7-Pin Tape & Reel
- RS 제품 번호:
- 261-5039
- 제조사 부품 번호:
- SCT040HU65G3AG
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 600 units)*
₩13,623,984.00
일시적 품절
- 2026년 12월 28일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 600 - 600 | ₩22,706.64 | ₩13,624,209.60 |
| 1200 - 1200 | ₩22,253.56 | ₩13,351,684.80 |
| 1800 + | ₩21,586.16 | ₩12,951,132.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-5039
- 제조사 부품 번호:
- SCT040HU65G3AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 3.5mm | |
| Standards/Approvals | No | |
| Length | 18.58mm | |
| Width | 14 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 3.5mm | ||
Standards/Approvals No | ||
Length 18.58mm | ||
Width 14 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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