제조사부품번호

STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG

RS 제품 번호:: 152-111
제조사 부품 번호:: SCT060HU75G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG

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대량 구매 할인 기용 가능

Subtotal (1 tape of 1 unit)*

₩18,724.80

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

Tape(s)	Per Tape
1 - 9	₩18,724.80
10 - 99	₩18,160.80
100 +	₩17,615.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 152-111
제조사 부품 번호:: SCT060HU75G3AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	750V
	Package Type	HU3PAK
	Series	SCT060HU
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±18 V
	Forward Voltage Vf	3V
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Operating Temperature	175°C
	Width	19 mm
	Height	3.6mm
	Length	14.1mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 750V
	Package Type HU3PAK
	Series SCT060HU
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±18 V
	Forward Voltage Vf 3V
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Operating Temperature 175°C
	Width 19 mm
	Height 3.6mm
	Length 14.1mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SCT060HU75G3AG

COO (Country of Origin):: JP

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG

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