제조사부품번호

STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK

RS 제품 번호:: 215-242
제조사 부품 번호:: SCT070HU120G3AG
제조업체:: STMicroelectronics

STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩20,868.00

재고있음

600 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩20,868.00
10 - 99	₩20,247.60
100 +	₩19,646.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-242
제조사 부품 번호:: SCT070HU120G3AG
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	HU3PAK
	Series	SCT
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Power Dissipation Pd	23W
	Maximum Operating Temperature	175°C
	Length	18.58mm
	Width	14 mm
	Standards/Approvals	RoHS
	Height	3.5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Package Type HU3PAK
	Series SCT
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Power Dissipation Pd 23W
	Maximum Operating Temperature 175°C
	Length 18.58mm
	Width 14 mm
	Standards/Approvals RoHS
	Height 3.5mm
	Automotive Standard AEC-Q101

Datasheet - SCT070HU120G3AG

COO (Country of Origin):: JP

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK

관련된 링크들