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STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG

RS 제품 번호:: 719-466
제조사 부품 번호:: SCT018HU65G3AG
제조업체:: STMicroelectronics

STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG

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Subtotal (1 unit)*

₩26,150.80

재고있음

280 개 단위 배송 준비 완료

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RS 제품 번호:: 719-466
제조사 부품 번호:: SCT018HU65G3AG
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	N channel
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	650V
	Series	Sct
	Package Type	HU3PAK
	Mount Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance Rds	21.5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	2.6V
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	388W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	79.4nC
	Maximum Operating Temperature	175°C
	Length	19mm
	Width	14.1 mm
	Height	3.6mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type N channel
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 650V
	Series Sct
	Package Type HU3PAK
	Mount Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance Rds 21.5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 2.6V
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 388W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 79.4nC
	Maximum Operating Temperature 175°C
	Length 19mm
	Width 14.1 mm
	Height 3.6mm
	Automotive Standard AEC-Q101

Datasheet - SCT018HU65G3AG

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG

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