STMicroelectronics SCT0 Power MOSFET, 60 A, 650 V, 7-Pin HU3PAK SCT027HU65G3AG
- RS 제품 번호:
- 330-233
- 제조사 부품 번호:
- SCT027HU65G3AG
- 제조업체:
- STMicroelectronics
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩32,035.20
재고있음
- 590 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩32,035.20 |
| 10 - 99 | ₩28,829.80 |
| 100 + | ₩26,581.32 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 330-233
- 제조사 부품 번호:
- SCT027HU65G3AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCT0 | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 60.4nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 14 mm | |
| Height | 3.5mm | |
| Length | 18.58mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCT0 | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 60.4nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 14 mm | ||
Height 3.5mm | ||
Length 18.58mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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