Infineon BSS N-Channel MOSFET, 90 mA, 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1
- RS 제품 번호:
- 260-5077
- Distrelec 제품 번호:
- 304-41-651
- 제조사 부품 번호:
- BSS225H6327FTSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩8,380.00
재고있음
- 추가로 2026년 10월 26일 부터 880 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩838.00 | ₩8,380.00 |
| 50 - 90 | ₩824.00 | ₩8,240.00 |
| 100 - 240 | ₩646.00 | ₩6,460.00 |
| 250 - 490 | ₩632.00 | ₩6,320.00 |
| 500 + | ₩610.00 | ₩6,100.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 260-5077
- Distrelec 제품 번호:
- 304-41-651
- 제조사 부품 번호:
- BSS225H6327FTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSS | |
| Package Type | SOT-89 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSS | ||
Package Type SOT-89 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 600V Maximum Drain-Source Voltage, 0.09A Maximum Continuous Drain Current - BSS225H6327FTSA1
This MOSFET is an enhancement-mode N-channel transistor designed for high-voltage, low-current switching in Compact SOT-89 packages. It operates across a wide temperature span suitable for demanding environments and meets automotive qualification standards while adhering to RoHS environmental requirements.
Features and Benefits:
• 600V maximum drain-source voltage enables high-voltage switching capability
• 45 Ω maximum drain-source resistance limits leakage in the off state
• 0.09A continuous drain current supports low-current control circuits
• -55°C to 150°C operating range permits use in extreme temperatures
• SOT-89 package reduces board footprint for Compact layouts
• 45 Ω maximum drain-source resistance limits leakage in the off state
• 0.09A continuous drain current supports low-current control circuits
• -55°C to 150°C operating range permits use in extreme temperatures
• SOT-89 package reduces board footprint for Compact layouts
Applications
• Suitable for low-current automotive control circuits
• Ideal for high-voltage signal switching
• Used with industrial sensors needing wide temperature tolerance
• Can be used for Compact power-management modules
• Suitable for designs requiring automotive-grade components
• Ideal for high-voltage signal switching
• Used with industrial sensors needing wide temperature tolerance
• Can be used for Compact power-management modules
• Suitable for designs requiring automotive-grade components
What package type is used and why is it relevant?
It uses a SOT-89 package which offers a small footprint and a thermal path suitable for low-power, high-voltage transistor implementations.
How does the device perform in automotive environments?
It meets AEC-Q101 qualification and operates across a broad temperature range appropriate for vehicle electronics.
What channel configuration and mode does it use?
The device is N-channel and arranged in enhancement mode, providing controllable conduction when driven.
Is the component compliant with environmental directives?
It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.
관련된 링크들
- Infineon BSS N-Channel MOSFET, 90 mA, 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1
- Infineon SIPMOS N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1
- Infineon OptiMOS 3 N-Channel MOSFET, 3.2 A, 60 V Enhancement, 4-Pin SOT-89 BSS606NH6327XTSA1
- Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- Infineon BSS Type P-Channel MOSFET, 630 mA, -20 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- Infineon BSS Type N-Channel MOSFET, 2.30 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- Infineon BSS Type P-Channel MOSFET, 1.50 A, -30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
