Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- RS 제품 번호:
- 752-8249
- 제조사 부품 번호:
- BSS87H6327FTSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 10 units)*
₩9,380.00
일시적 품절
- 2027년 1월 14일 부터 1,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 40 | ₩938.00 | ₩9,380.00 |
| 50 - 190 | ₩906.00 | ₩9,060.00 |
| 200 - 490 | ₩874.00 | ₩8,740.00 |
| 500 + | ₩846.00 | ₩8,460.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 752-8249
- 제조사 부품 번호:
- BSS87H6327FTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 1W Maximum Power Dissipation - BSS87H6327FTSA1
This MOSFET is a surface-mount switching device designed for low-current, high-voltage applications in automotive and industrial environments. It operates as an enhancement-mode N-channel transistor and is intended for compact board-level implementations where thermal endurance and voltage handling are required.
Features and Benefits:
• 240V drain capability enabling high-voltage switching applications
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management
Applications
• Suitable for auxiliary automotive control circuits
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies
What temperature range can it reliably endure in operation?
It is specified to function between -55 °C and 150 °C, allowing use across harsh ambient and elevated under‑bonnet conditions.
How many pins and what mounting format does it require on the PCB?
The device has three electrical leads and is supplied in an SOT-89 package for surface mounting.
How does the package size affect board-space planning?
Its compact 4.5 x 2.5 x 1.5mm envelope minimises footprint and supports dense layouts without external heatsinking for low-power designs.
Is the device suited to automotive qualification criteria?
It meets automotive-grade AEC‑Q101 standards, aligning with component selection for vehicle electronic subsystems.
관련된 링크들
- Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1
- Infineon BSS Type N-Channel MOSFET, 0.09 A, 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1
- Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89
- Infineon BSS Type N-Channel MOSFET, 0.09 A, 600 V Enhancement, 3-Pin SOT-89
- Nexperia BSS87 Type N-Channel MOSFET, 400 mA, 200 V Enhancement, 3-Pin SOT-89 BSS87,115
- Nexperia BSS87 Type N-Channel MOSFET, 400 mA, 200 V Enhancement, 3-Pin SOT-89
- Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1
