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Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

RS 제품 번호:: 259-2739
제조사 부품 번호:: IPTG063N15NM5ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1800 units)*

₩6,987,960.00

일시적 품절

2026년 7월 06일 부터 배송

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수량	한팩당	릴당*
1800 - 1800	₩3,882.20	₩6,987,960.00
3600 - 3600	₩3,805.12	₩6,848,200.80
5400 +	₩3,690.44	₩6,642,453.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-2739
제조사 부품 번호:: IPTG063N15NM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	122A
	Maximum Drain Source Voltage Vds	150V
	Package Type	HSOG
	Series	IPT
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.3mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	50nC
	Forward Voltage Vf	0.84V
	Maximum Power Dissipation Pd	214W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.1mm
	Width	8.75 mm
	Height	2.4mm
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 122A
	Maximum Drain Source Voltage Vds 150V
	Package Type HSOG
	Series IPT
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.3mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 50nC
	Forward Voltage Vf 0.84V
	Maximum Power Dissipation Pd 214W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.1mm
	Width 8.75 mm
	Height 2.4mm
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPTG063N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-22

Infineon IPT Type N-Channel MOSFET, 122 A, 150 V, 8-Pin HSOG

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