Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩12,406.12

Add to Basket
수량 선택 또는 입력
재고있음
  • 1,800 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩12,406.12
10 - 99₩11,157.80
100 - 499₩10,304.28
500 - 999₩9,554.16
1000 +₩8,555.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-137
제조사 부품 번호:
IPTG029N13NM6ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

135V

Series

IPT

Package Type

PG-HSOG-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

104nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

294W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

J-STD-020, RoHS, IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.

Optimized for motor drives and battery powered applications

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

관련된 링크들