제조사부품번호

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG

RS 제품 번호:: 259-2737
제조사 부품 번호:: IPTG054N15NM5ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 1800 units)*

₩7,404,192.00

일시적 품절

1,800 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1800 - 1800	₩4,113.44	₩7,404,192.00
3600 - 3600	₩4,030.72	₩7,256,311.20
5400 +	₩3,949.88	₩7,111,137.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-2737
제조사 부품 번호:: IPTG054N15NM5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	143A
	Maximum Drain Source Voltage Vds	150V
	Series	IPT
	Package Type	HSOG
	Pin Count	8
	Maximum Drain Source Resistance Rds	55.4mΩ
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.83V
	Maximum Operating Temperature	175°C
	Width	8.75 mm
	Height	2.4mm
	Length	10.1mm
	Standards/Approvals	RoHS, IEC 61249-2-21
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 143A
	Maximum Drain Source Voltage Vds 150V
	Series IPT
	Package Type HSOG
	Pin Count 8
	Maximum Drain Source Resistance Rds 55.4mΩ
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.83V
	Maximum Operating Temperature 175°C
	Width 8.75 mm
	Height 2.4mm
	Length 10.1mm
	Standards/Approvals RoHS, IEC 61249-2-21
	Automotive Standard No

Datasheet - IPTG054N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG

관련된 링크들