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Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

RS 제품 번호:: 259-2738
제조사 부품 번호:: IPTG054N15NM5ATMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

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Subtotal (1 unit)*

₩8,666.80

일시적 품절

1,800 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩8,666.80
10 - 99	₩8,234.40
100 - 249	₩7,820.80
250 - 499	₩7,426.00
500 +	₩7,068.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 259-2738
제조사 부품 번호:: IPTG054N15NM5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	143A
	Maximum Drain Source Voltage Vds	150V
	Package Type	HSOG
	Series	IPT
	Pin Count	8
	Maximum Drain Source Resistance Rds	55.4mΩ
	Typical Gate Charge Qg @ Vgs	58nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.83V
	Maximum Power Dissipation Pd	250W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.1mm
	Width	8.75 mm
	Standards/Approvals	RoHS, IEC 61249-2-21
	Height	2.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 143A
	Maximum Drain Source Voltage Vds 150V
	Package Type HSOG
	Series IPT
	Pin Count 8
	Maximum Drain Source Resistance Rds 55.4mΩ
	Typical Gate Charge Qg @ Vgs 58nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.83V
	Maximum Power Dissipation Pd 250W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.1mm
	Width 8.75 mm
	Standards/Approvals RoHS, IEC 61249-2-21
	Height 2.4mm
	Automotive Standard No

Datasheet - IPTG054N15NM5ATMA1

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

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