제조사부품번호

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

RS 제품 번호:: 233-4384
제조사 부품 번호:: IPTG011N08NM5ATMA1
제조업체:: Infineon

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 1800 units)*

₩10,175,688.00

일시적 품절

2026년 5월 25일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1800 - 7200	₩5,653.16	₩10,175,011.20
9000 +	₩5,483.96	₩9,869,774.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-4384
제조사 부품 번호:: IPTG011N08NM5ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	408A
	Maximum Drain Source Voltage Vds	80V
	Package Type	HSOG
	Series	IPTG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	178nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	2.4mm
	Standards/Approvals	No
	Width	8.75 mm
	Length	10.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 408A
	Maximum Drain Source Voltage Vds 80V
	Package Type HSOG
	Series IPTG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 178nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 2.4mm
	Standards/Approvals No
	Width 8.75 mm
	Length 10.1mm
	Automotive Standard No

Datasheet - IPTG011N08NM5ATMA1

The Infineon OptiMOS power MOSFET IPTG011N08NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 80 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board

High efficiency and lower EMI

High performance capability

Infineon IPTG Type N-Channel MOSFET, 408 A, 80 V Enhancement, 8-Pin HSOG

관련된 링크들