제조사부품번호

Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

RS 제품 번호:: 233-4387
제조사 부품 번호:: IPTG014N10NM5ATMA1
제조업체:: Infineon

Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩14,306.80

재고있음

986 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩7,153.40	₩14,306.80
10 - 98	₩7,012.40	₩14,024.80
100 - 248	₩6,871.40	₩13,742.80
250 - 498	₩6,730.40	₩13,460.80
500 +	₩6,598.80	₩13,197.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 233-4387
제조사 부품 번호:: IPTG014N10NM5ATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	366A
	Maximum Drain Source Voltage Vds	100V
	Series	IPTG
	Package Type	HSOG
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	375W
	Typical Gate Charge Qg @ Vgs	169nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Length	10.1mm
	Standards/Approvals	No
	Width	8.75 mm
	Height	2.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 366A
	Maximum Drain Source Voltage Vds 100V
	Series IPTG
	Package Type HSOG
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 375W
	Typical Gate Charge Qg @ Vgs 169nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Length 10.1mm
	Standards/Approvals No
	Width 8.75 mm
	Height 2.4mm
	Automotive Standard No

Datasheet - IPTG014N10NM5ATMA1

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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