Infineon IPTG Type N-Channel MOSFET, 366 A, 100 V Enhancement, 8-Pin HSOG IPTG014N10NM5ATMA1

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Subtotal (1 pack of 2 units)*

₩15,405.00

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한팩당
한팩당*
2 - 8₩7,702.50₩15,405.00
10 - 98₩7,546.50₩15,093.00
100 - 248₩7,400.25₩14,800.50
250 - 498₩7,244.25₩14,488.50
500 +₩7,107.75₩14,215.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
233-4387
제조사 부품 번호:
IPTG014N10NM5ATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

366A

Maximum Drain Source Voltage Vds

100V

Series

IPTG

Package Type

HSOG

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

169nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET IPTG014N10NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ∼60 percent board space reduction. This new package in OptiMOS 5 - 100 V offers very low RDS(on) and is optimized to handle high current 300 A. The flexibility of gullwing leads, OptiMOS in TOLG package shows excellent solder joint reliability on Al-IMS board.

High efficiency and lower EMI

High performance capability

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