Infineon IPT Type N-Channel Power Transistor, 331 A, 120 V Enhancement, 8-Pin PG-HSOG-8 IPTG017N12NM6ATMA1

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₩21,108.64

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한팩당*
2 - 18₩10,554.32₩21,106.76
20 - 198₩9,501.52₩19,004.92
200 +₩8,764.56₩17,527.24

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-135
제조사 부품 번호:
IPTG017N12NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

331A

Maximum Drain Source Voltage Vds

120V

Series

IPT

Package Type

PG-HSOG-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

395W

Typical Gate Charge Qg @ Vgs

113nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, MSL1 J-STD-020, IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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