Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFZ48NPBF

RS 제품 번호:: 540-9957
제조사 부품 번호:: IRFZ48NPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V Enhancement, 3-Pin TO-220 IRFZ48NPBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩864.80

재고있음

141 개 단위 배송 준비 완료
추가로 2026년 1월 01일 부터 822 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 12	₩864.80
13 - 24	₩846.00
25 +	₩827.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 540-9957
제조사 부품 번호:: IRFZ48NPBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	14mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	130W
	Typical Gate Charge Qg @ Vgs	81nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Width	4.69 mm
	Height	8.77mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 14mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 130W
	Typical Gate Charge Qg @ Vgs 81nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Width 4.69 mm
	Height 8.77mm
	Standards/Approvals No
	Automotive Standard No

Infineon HEXFET Series MOSFET, 64A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFZ48NPBF

This power MOSFET is suitable for high-efficiency applications, featuring robust performance and advanced processing methods. It provides a dependable option for a variety of electronic designs, especially in scenarios where power efficiency is essential.

Features & Benefits

• Supports continuous drain currents of up to 64A

• Utilises enhancement mode for improved switching characteristics

• Low RDS(on) of 14mΩ enhances efficiency

• Operates reliably within a temperature range of -55°C to +175°C

• Capable of handling gate-source voltages up to ±20V

• Fully avalanche rated for safety in transient conditions

Applications

• Driving inductive loads in automation systems

• Power management circuits in industrial equipment

• Automotive electrical systems and power converters

• DC-DC converters and power supplies

• Motor control requiring high efficiency

What is the maximum power dissipation capability?

The device can manage a maximum power dissipation of 130 W when adequately cooled, ensuring effective thermal management in high-load scenarios.

How does the operating temperature range affect performance?

The extensive operating temperature range of -55°C to +175°C allows the device to function reliably in a variety of environmental conditions.

Is this device compatible with standard PCB layouts?

Yes, it is available in a TO-220AB package, commonly used in industry for straightforward PCB mounting and efficient heat dissipation.

What applications benefit most from this component's fast switching speed?

Power MOSFETs with fast switching capabilities are ideal for applications such as switch mode power supplies and high-frequency converters, where low switching losses are crucial.

How should the device be handled during installation?

During installation, ensure proper mounting torque and avoid excessive soldering temperatures. It is recommended to adhere to standard safety guidelines to prevent damage.