Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V, 3-Pin TO-263 IRL3705NSTRLPBF
- RS Stock No.:
- 217-2636
- Mfr. Part No.:
- IRL3705NSTRLPBF
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
₩26,470.40
재고있음
- 추가로 2026년 2월 09일 부터 730 개 단위 배송
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | ₩2,647.04 | ₩26,470.40 |
| 200 - 390 | ₩2,581.24 | ₩25,812.40 |
| 400 + | ₩2,539.88 | ₩25,398.80 |
*price indicative
- RS Stock No.:
- 217-2636
- Mfr. Part No.:
- IRL3705NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Height | 17.79mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Height 17.79mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220 IRL3705NPBF
- Infineon HEXFET Type N-Channel MOSFET, 86 A, 55 V Enhancement, 3-Pin TO-263 IRL3705ZSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 10 A, 100 V, 3-Pin TO-263 IRL520NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET, 89 A, 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET, 86 A, 55 V Enhancement, 3-Pin TO-263