Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263

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₩697,856.00

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  • 2026년 3월 16일 부터 배송
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800 - 800₩872.32₩697,254.40
1600 - 1600₩783.96₩627,468.80
2400 +₩768.92₩614,985.60

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RS 제품 번호:
258-3989
제조사 부품 번호:
IRFZ48NSTRLPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.014Ω

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

81nC

Maximum Power Dissipation Pd

130W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Advanced Process Technology

Surface Mount

Low-profile through-hole

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

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