Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN IRFH6200TRPBF
- RS 제품 번호:
- 257-9377
- 제조사 부품 번호:
- IRFH6200TRPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩14,457.20
재고있음
- 추가로 2025년 12월 29일 부터 3,865 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,891.44 | ₩14,457.20 |
| 50 - 95 | ₩2,748.56 | ₩13,742.80 |
| 100 - 495 | ₩2,583.12 | ₩12,915.60 |
| 500 - 1995 | ₩2,402.64 | ₩12,013.20 |
| 2000 + | ₩2,210.88 | ₩11,054.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9377
- 제조사 부품 번호:
- IRFH6200TRPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 49A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 155nC | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 49A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 155nC | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFH series is the 20V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
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