제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN

RS 제품 번호:: 257-9376
제조사 부품 번호:: IRFH6200TRPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN

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Subtotal (1 reel of 4000 units)*

₩5,557,280.00

일시적 품절

2026년 3월 30일 부터 배송

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수량	한팩당	릴당*
4000 +	₩1,389.32	₩5,556,528.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 257-9376
제조사 부품 번호:: IRFH6200TRPBF
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	20V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	15mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	250W
	Typical Gate Charge Qg @ Vgs	155nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 20V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 15mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 250W
	Typical Gate Charge Qg @ Vgs 155nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRFH6200TRPBF

The Infineon IRFH series is the 20V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN

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