Infineon HEXFET Type N-Channel MOSFET, 259 A, 40 V PQFN IRFH7004TRPBF
- RS 제품 번호:
- 257-9380
- 제조사 부품 번호:
- IRFH7004TRPBF
- 제조업체:
- Infineon
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- RS 제품 번호:
- 257-9380
- 제조사 부품 번호:
- IRFH7004TRPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 259A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 129nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 6 mm | |
| Standards/Approvals | RoHS | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 259A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 129nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 6 mm | ||
Standards/Approvals RoHS | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon IRFH series is the 40V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
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