Infineon HEXFET Type N-Channel MOSFET, 40 A, 60 V PQFN IRFH5406TRPBF
- RS 제품 번호:
- 257-9375
- 제조사 부품 번호:
- IRFH5406TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩12,032.00
마지막 RS 재고
- 최종적인 2,035 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 45 | ₩2,406.40 | ₩12,032.00 |
| 50 - 95 | ₩2,286.08 | ₩11,430.40 |
| 100 - 495 | ₩2,150.72 | ₩10,753.60 |
| 500 - 1995 | ₩2,000.32 | ₩10,001.60 |
| 2000 + | ₩1,838.64 | ₩9,193.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9375
- 제조사 부품 번호:
- IRFH5406TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 14.4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 14.4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFH series is the 60V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard surface mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
관련된 링크들
- Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN IRFH7545TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 17 A, 75 V PQFN IRFH5007TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 265 A, 40 V PQFN IRFH7084TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN IRFH6200TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 159 A, 40 V PQFN IRFH7440TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 259 A, 40 V PQFN IRFH7004TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 117 A, 40 V PQFN IRFH7446TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5302TRPBF