Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET, 100 A, 30 V, 12-Pin PowerPAIR 3 x 3FS
- RS 제품 번호:
- 252-0294
- 제조사 부품 번호:
- SIZF5302DT-T1-RE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩4,303,320.00
재고있음
- 6,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 6000 | ₩1,434.44 | ₩4,305,576.00 |
| 9000 + | ₩1,391.20 | ₩4,176,420.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 252-0294
- 제조사 부품 번호:
- SIZF5302DT-T1-RE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | Dual N-Channel 30 V (D-S) MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type Dual N-Channel 30 V (D-S) MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Symmetric dual N-channel
Flip chip technology optimal thermal design
High side and low side MOSFETs form optimized
Combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency
For high frequency swi
관련된 링크들
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