Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

RS 제품 번호:: 268-8309
제조사 부품 번호:: SIHK105N60EF-T1GE3
제조업체:: Vishay

Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 2 units)*

₩21,620.00

2,050 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 48	₩10,810.00	₩21,620.00
50 - 98	₩9,720.00	₩19,440.00
100 - 248	₩7,960.00	₩15,920.00
250 - 998	₩7,800.00	₩15,600.00
1000 +	₩7,640.00	₩15,280.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 268-8309
제조사 부품 번호:: SIHK105N60EF-T1GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.105Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	142W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	51nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.105Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 142W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 51nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK105N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60EF-T1GE3

This MOSFET is a high-voltage N-channel enhancement device designed for power switching in demanding PCB-mounted systems. It operates across a wide temperature range and is intended for applications requiring substantial drain current and elevated blocking voltage while conforming to RoHS environmental standards.

Features and Benefits:

• 650V drain rating enables high-voltage switching capability
• 24A continuous drain current supports heavy-load operation
• 0.105Ω Rds(on) reduces conduction losses under load
• 142W power dissipation allows high-power handling
• 51nC typical gate charge minimises switching energy losses
• 30V gate rating permits wide gate-drive flexibility

Applications

• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor-drive front ends
• Used with switch-mode power supplies for energy-efficient switching
• Can be used for solid-state relays and protection circuits
• Suitable for telecom power distribution modules

What package format does this device use for PCB assembly?

It is supplied in a PowerPAK 10x12 package intended for surface-mount PCB attachment, providing a compact footprint and thermal relief for high-power layouts.

How does the device cope with extreme ambient temperatures?

The device is specified to operate from -55°C up to 150°C, covering wide industrial thermal conditions without derating below those limits.

What gate-drive considerations should be observed for reliable operation?

Gate excursions must be limited to a maximum of 30V to prevent gate oxide stress

appropriate gate resistances and drive circuitry are recommended to manage the 51nC charge during switching.

Is this device suitable for automotive qualification?

It is not designated as automotive-grade, so it should not be assumed to meet automotive-specific qualification requirements.