Vishay SIHK N-Channel MOSFET, 47 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3

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RS 제품 번호:
268-8304
제조사 부품 번호:
SIHK045N60EF-T1GE3
제조업체:
Vishay
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모두 선택

브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.052Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

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