Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

RS 제품 번호:: 239-8631
제조사 부품 번호:: SiHH105N60EF-T1GE3
제조업체:: Vishay

Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 3000 units)*

₩14,502,000.00

일시적 품절

2027년 2월 24일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 12000	₩4,834.00	₩14,501,400.00
15000 +	₩4,738.00	₩14,211,600.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-8631
제조사 부품 번호:: SiHH105N60EF-T1GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	26A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.091Ω
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Gate Source Voltage Vgs	30V
	Maximum Power Dissipation Pd	174W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 26A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.091Ω
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Gate Source Voltage Vgs 30V
	Maximum Power Dissipation Pd 174W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - SiHH105N60EF-T1GE3

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - SiHH105N60EF-T1GE3

This power MOSFET is a high-voltage switching transistor designed for surface-mount applications in industrial and automotive environments. It operates across a wide temperature span and is intended for circuits requiring robust high-voltage switching with moderate continuous current capacity and gate drive characteristics.

Features and Benefits:

• 650V drain-source rating enables high-voltage switching
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes

Applications

• Suitable for high-voltage DC-DC converters in industrial power supplies
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting

What mounting format does it use for compact assemblies?

It is supplied in a PowerPAK 8x8 format designed for surface mounting to facilitate dense PCB layouts and thermal coupling to copper pours.

How does it perform across temperature extremes?

It is specified to operate from -55°C up to +150°C, so it can function in demanding ambient and elevated junction scenarios when cooled appropriately.

What gate-drive constraints should be observed?

The device must not be driven beyond a gate-source voltage of 30V and typical gate charge is 33nC, which informs peak drive current and driver selection.

Is it suitable for automotive qualification requirements?

The device meets the AEC‑Q101 automotive standard, making it appropriate for vehicle‑grade electronic designs that require that qualification.