제조사부품번호

Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8

RS 제품 번호:: 250-0594
제조사 부품 번호:: IPT60R055CFD7XTMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2000 units)*

₩10,708,480.00

일시적 품절

2026년 5월 25일 부터 배송

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수량	한팩당	릴당*
2000 - 2000	₩5,354.24	₩10,710,360.00
4000 - 4000	₩5,248.96	₩10,496,040.00
6000 +	₩5,143.68	₩10,286,232.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0594
제조사 부품 번호:: IPT60R055CFD7XTMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	400A
	Maximum Drain Source Voltage Vds	40V
	Package Type	HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 400A
	Maximum Drain Source Voltage Vds 40V
	Package Type HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPT60R055CFD7XTMA1

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.

Best-in-class RDS(on) in SMD and THD packages

Excellent hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use / performance trade-off

Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8

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