Infineon IPT Type N-Channel MOSFET, 8 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- RS 제품 번호:
- 349-262
- 제조사 부품 번호:
- IPT60T065S7XTMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩19,695.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩9,847.50 | ₩19,695.00 |
| 20 - 198 | ₩8,862.75 | ₩17,725.50 |
| 200 - 998 | ₩8,170.50 | ₩16,341.00 |
| 1000 - 1998 | ₩7,575.75 | ₩15,151.50 |
| 2000 + | ₩6,805.50 | ₩13,611.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-262
- 제조사 부품 번호:
- IPT60T065S7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Power Dissipation Pd | 167W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Power Dissipation Pd 167W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.
CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint
Optimized price performance in low frequency switching applications
High pulse current capability
Seamless diagnostics at the lowest system
Temperature sense feature for protection and optimized thermal device utilization
관련된 링크들
- Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1
- Infineon IPT Type N-Channel MOSFET, 13 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1
- Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT Type N-Channel Power Transistor, 70 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- Infineon IPT Type N-Channel Power MOSFET, 23 A, 0.82 V Enhancement, 8-Pin PG-HSOF-8 IPT60R022S7XTMA1
- Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8