Infineon IPT N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8 IPT60R055CFD7XTMA1

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₩11,840.00

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  • 2027년 3월 08일 부터 배송
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1 - 9₩11,840.00
10 - 99₩10,680.00
100 - 249₩9,580.00
250 - 499₩8,640.00
500 +₩7,780.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
250-0595
제조사 부품 번호:
IPT60R055CFD7XTMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400A

Maximum Drain Source Voltage Vds

40V

Series

IPT

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.

Best-in-class RDS(on) in SMD and THD packages

Excellent hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use / performance trade-off

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