Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IPT60R045CFD7XTMA1
- RS 제품 번호:
- 273-2797
- 제조사 부품 번호:
- IPT60R045CFD7XTMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 reel of 2000 units)*
₩12,498,240.00
일시적 품절
- 2026년 5월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2000 + | ₩6,249.12 | ₩12,497,488.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2797
- 제조사 부품 번호:
- IPT60R045CFD7XTMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 272W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 272W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC for Industrial Applications | ||
Automotive Standard No | ||
The Infineon MOSFET is a 600V CoolMOS CFD7 power transistor. The CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full bridge and LLC. Resulting from reduced gate charge, best in class reverse recovery charge and improved turn off behaviour CoolMOSCFD7 offers highest efficiency in resonant topologies.
RoHS compliant
Low gate charge
Ultra fast body diode
Increased power density solutions
Excellent hard commutation ruggedness
관련된 링크들
- Infineon IPT Type N-Channel Power Transistor, 52 A, 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 23 A, 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 16 A, 650 V, 8-Pin PG-HSOF-8 IPT65R190CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 19 A, 650 V, 8-Pin PG-HSOF-8 IPT65R155CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 28 A, 650 V, 8-Pin PG-HSOF-8 IPT65R099CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 34 A, 650 V, 8-Pin PG-HSOF-8 IPT65R080CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 43 A, 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device Type N-Channel MOSFET, 63 A, 650 V Enhancement, 8-Pin PG-HSOF-8