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Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1

RS 제품 번호:: 349-256
제조사 부품 번호:: IPT60R016CM8XTMA1
제조업체:: Infineon

Infineon IPT Type N-Channel Power MOSFET, 142 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1

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RS 제품 번호:: 349-256
제조사 부품 번호:: IPT60R016CM8XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	142A
	Maximum Drain Source Voltage Vds	600V
	Series	IPT
	Package Type	PG-HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	16mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	171nC
	Maximum Power Dissipation Pd	694W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 142A
	Maximum Drain Source Voltage Vds 600V
	Series IPT
	Package Type PG-HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 16mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 171nC
	Maximum Power Dissipation Pd 694W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IPT60R016CM8XTMA1

COO (Country of Origin):: MY

Infineon IPT Series Power MOSFET, 600V Drain Source Voltage, 142A Maximum Continuous Drain Current - IPT60R016CM8XTMA1

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power conversion roles in demanding electronic systems. It operates across a wide ambient range and is supplied in a compact surface-mount package for integration on populated boards where robust thermal and current handling are required.

Features and Benefits:

• 600V rating enables high-voltage switching applications
• 16mΩ Rds(on) reduces conduction losses during heavy load
• 142A continuous current supports high-current power stages
• 171nC typical gate charge allows quicker gate-drive transitions
• 694W maximum power dissipation aids thermal margin planning
• 30V gate tolerance supports flexible gate-drive voltages

Applications

• Suitable for industrial motor inverter stages
• Ideal for high-voltage power supplies and converters
• Used with resonant and hard-switched SMPS topologies
• Can be used for traction and heavy-duty DC-DC systems
• Suitable for board-level power distribution and switching

What package and mounting method does it use for PCB assembly?

It is supplied in a PG-HSOF-8 package intended for surface-mount placement to facilitate automated assembly and thermal conduction to the board.

How does it perform across temperature extremes?

The device is rated to operate from -55°C up to 150°C, supporting applications exposed to wide temperature variations.

What gate-voltage limits should be observed during design?

Gate-source voltages must not exceed 30V to prevent gate-dielectric stress.

Is it compliant with any industry testing standards?

It meets JEDEC standards for semiconductor qualification and handling.