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Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

RS 제품 번호:: 349-260
제조사 부품 번호:: IPT60T022S7XTMA1
제조업체:: Infineon

Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩21,960.28

일시적 품절

2026년 5월 04일 부터 배송

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수량	한팩당
1 - 9	₩21,960.28
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-260
제조사 부품 번호:: IPT60T022S7XTMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-HSOF-8
	Series	IPT
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.82V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	390W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC, JS-001, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-HSOF-8
	Series IPT
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.82V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 390W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC, JS-001, RoHS
	Automotive Standard No

Datasheet - IPT60T022S7XTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7 boasts the lowest Rdson values for an HV SJ MOSFET, with a distinctive increase in energy efficiency. The embedded Temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS and inverter topologies. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.

CoolMOS S7 technology enables lowest RDS(on) in the smallest footprint

Optimized price performance in low frequency switching applications

High pulse current capability

Seamless diagnostics at the lowest system

Temperature sense feature for protection and optimized thermal device utilization

Infineon IPT Type N-Channel MOSFET, 23 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1

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