STMicroelectronics 3 Phase A2U Type N-Channel SiC Power Module, 75 A, 1200 V Enhancement, 8-Pin ACEPACK 2 A2U12M12W2-F2
- RS 제품 번호:
- 249-6720
- 제조사 부품 번호:
- A2U12M12W2-F2
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩526,890.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩526,890.00 |
| 2 - 3 | ₩516,340.50 |
| 4 - 7 | ₩500,838.00 |
| 8 - 11 | ₩490,834.50 |
| 12 + | ₩485,998.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-6720
- 제조사 부품 번호:
- A2U12M12W2-F2
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | ACEPACK 2 | |
| Series | A2U | |
| Mount Type | Chassis | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 298nC | |
| Transistor Configuration | 3 Phase | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type ACEPACK 2 | ||
Series A2U | ||
Mount Type Chassis | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 298nC | ||
Transistor Configuration 3 Phase | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins
An NTC sensor completes the design
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