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STMicroelectronics M2TP80M12W2 8 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK DMT-32

RS 제품 번호:: 640-674
제조사 부품 번호:: M2TP80M12W2-2LA
제조업체:: STMicroelectronics

STMicroelectronics M2TP80M12W2 8 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK DMT-32

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Subtotal (1 unit)*

₩107,609.32

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2026년 10월 13일 부터 배송

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RS 제품 번호:: 640-674
제조사 부품 번호:: M2TP80M12W2-2LA
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET Arrays
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	ACEPACK DMT-32
	Series	M2TP80M12W2
	Mount Type	Through Hole
	Pin Count	32
	Maximum Drain Source Resistance Rds	114mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	22 V
	Forward Voltage Vf	1.10V
	Maximum Operating Temperature	175°C
	Width	27.90 mm
	Standards/Approvals	AQG 324
	Height	5.90mm
	Length	44.50mm
	Number of Elements per Chip	8
	Automotive Standard	AEC

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET Arrays
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Package Type ACEPACK DMT-32
	Series M2TP80M12W2
	Mount Type Through Hole
	Pin Count 32
	Maximum Drain Source Resistance Rds 114mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 22 V
	Forward Voltage Vf 1.10V
	Maximum Operating Temperature 175°C
	Width 27.90 mm
	Standards/Approvals AQG 324
	Height 5.90mm
	Length 44.50mm
	Number of Elements per Chip 8
	Automotive Standard AEC

Datasheet - M2TP80M12W2-2LA

COO (Country of Origin):: CN

The STMicroelectronics high-efficiency, automotive-grade power module built in the ACEPACK DMT-32 package. It implements a 3-phase four-wire power factor correction (PFC) topology using six second-generation silicon carbide (SiC) MOSFETs and two rectifier diodes. Designed for the PFC stage of on-board chargers (OBCs) in electric and hybrid vehicles, it offers a compact, thermally optimized solution with integrated temperature sensing.

1200 V silicon carbide MOSFETs with typical RDS(on) of 84 mΩ

Implements a 3-phase four-wire power factor correction (PFC) topology

Includes 1200 V / 20 A rectifier diodes

Integrated NTC thermistor for real-time temperature monitoring

STMicroelectronics M2TP80M12W2 8 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK DMT-32

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