제조사부품번호

Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1

RS 제품 번호:: 244-8544
제조사 부품 번호:: IPD050N10N5ATMA1
제조업체:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD050N10N5ATMA1

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Subtotal (2 units, in packs of 2)*

₩11,800.00

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	한팩당*
2 - 8	₩5,900.00	₩11,800.00
10 - 98	₩5,760.00	₩11,520.00
100 - 248	₩5,620.00	₩11,240.00
250 - 498	₩5,480.00	₩10,960.00
500 +	₩5,370.00	₩10,740.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-8544
제조사 부품 번호:: IPD050N10N5ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	75V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 75V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD050N10N5ATMA1

Infineon IPD Series MOSFET, 75V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD050N10N5ATMA1

This MOSFET is a surface-mount N-channel power transistor designed for high-current switching in demanding environments, offering wide operating-temperature tolerance and adherence to industry environmental standards.

Features and Benefits:

• 75 V maximum drain-source voltage enables moderate-voltage switching
• 180 A continuous drain current supports high-current applications
• 3 mΩ low on-resistance minimises conduction losses
• 81 W power dissipation allows sustained thermal load handling
• 80 nC typical gate charge enables predictable gate-drive requirements
• 20 V maximum gate-source rating accommodates robust gate drive

Applications

• Suitable for automotive power distribution units
• Ideal for DC-DC converters in industrial equipment
• Used for motor drive stages requiring high current
• Can be used for battery management and protection
• Used with power switching arrays on surface-mount assemblies

What temperature range can it operate within?

It functions across an extended range from -55 °C to 175 °C, supporting harsh thermal conditions.

How does the package influence mounting and thermal performance?

The TO-252 surface-mount package provides a Compact board footprint and facilitates heat transfer to the PCB for thermal management.

What diode characteristic is relevant for forward conduction?

The intrinsic diode exhibits a forward voltage of approximately 1.3 V during conduction events.

Is it suitable for applications with environmental material restrictions?

It complies with RoHS requirements, meeting restrictions on certain hazardous substances.

What channel orientation and mode does it use?

It employs an N-type channel operating in enhancement mode for standard power-switching behaviour.