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Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1

RS 제품 번호:: 244-0944
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1

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Subtotal (1 pack of 2 units)*

₩12,220.00

추가로 2026년 10월 05일 부터 2,464 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩6,110.00	₩12,220.00
10 - 98	₩5,960.00	₩11,920.00
100 - 248	₩5,830.00	₩11,660.00
250 - 498	₩5,680.00	₩11,360.00
500 +	₩5,540.00	₩11,080.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-0944
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	80nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	900mV
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 80nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 900mV
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD65R225C7ATMA1

Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD65R225C7ATMA1

This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding environments. It provides robust drain-to-source handling for medium-voltage applications and operates across a wide temperature range, making it suitable for industrial and automotive contexts where compact, high-power switching is required.

Features and Benefits:

• 40V maximum drain-to-source voltage supporting medium-voltage circuits
• 180A continuous drain current enabling high-current switching
• 1.2mΩ low Rds(on) minimising conduction losses
• 81W maximum power dissipation allowing sustained load handling
• 80nC typical gate charge delivering predictable switching energy
• 0.9V forward voltage reducing voltage drop under load

Applications

• Suitable for automotive power distribution modules
• Ideal for high-current DC motor drive stages
• Used with battery management systems in electric vehicles
• Can be used for industrial power converters
• Suitable for Compact surface-mount power assemblies

What gate drive amplitude can be applied safely?

The gate may be driven up to 20V relative to source within specified limits.

What thermal range can the device tolerate during operation?

It functions across temperatures from -55°C to +150°C for extended use.

Which mounting style is provided for board assembly?

It is supplied in a TO-252 package intended for surface mounting.

Does it meet automotive qualification standards?

It complies with AEC-Q101 requirements for automotive component grading.

Are there environmental restrictions on its manufacture?

The device adheres to RoHS directives restricting hazardous substances.