제조사부품번호

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1

RS 제품 번호:: 244-0944
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩8,234.40

재고있음

2,464 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩4,117.20	₩8,234.40
10 - 98	₩4,013.80	₩8,027.60
100 - 248	₩3,919.80	₩7,839.60
250 - 498	₩3,825.80	₩7,651.60
500 +	₩3,731.80	₩7,463.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-0944
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD65R225C7ATMA1

The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

650V voltage

Revolutionary Best-in-Class RDS (on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Improved safety margin and suitable for both SMPS and Solar Inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1

관련된 링크들