Infineon IPD N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1
- RS 제품 번호:
- 244-1594
- 제조사 부품 번호:
- IPD5N25S3430ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩19,380.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩3,876.00 | ₩19,380.00 |
| 10 - 95 | ₩3,788.00 | ₩18,940.00 |
| 100 - 245 | ₩3,696.00 | ₩18,480.00 |
| 250 - 495 | ₩3,600.00 | ₩18,000.00 |
| 500 + | ₩3,528.00 | ₩17,640.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-1594
- 제조사 부품 번호:
- IPD5N25S3430ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD5N25S3430ATMA1
This MOSFET is a high-current switching transistor designed for demanding electronic power stages and automotive environments, delivering robust conduction and controlled gate drive behaviour across an extended temperature range.
Features and Benefits:
• 40V drain rating enables low-voltage power system switching
• 180A continuous drain current supports high-current loads
• 1.4mΩ low Rds(on) reduces conduction losses in heavy current paths
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge facilitates predictable switching energy
• 20V gate tolerance accepts common gate-drive voltages
• 180A continuous drain current supports high-current loads
• 1.4mΩ low Rds(on) reduces conduction losses in heavy current paths
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge facilitates predictable switching energy
• 20V gate tolerance accepts common gate-drive voltages
Applications
• Suitable for automotive powertrain inverter and motor stages
• Ideal for DC-DC converter output stage implementations
• Used with battery management modules in electric vehicles
• Can be used for high-current load switching on PCBs
• Used for surface-mount power assemblies in harsh environments
• Ideal for DC-DC converter output stage implementations
• Used with battery management modules in electric vehicles
• Can be used for high-current load switching on PCBs
• Used for surface-mount power assemblies in harsh environments
What thermal extremes can it tolerate during operation?
It operates across an ambient span from -55°C up to 175°C.
Which package and mounting style are provided for assembly?
It is supplied in a TO-252 package intended for surface mounting.
What polarity and conduction mode does it employ?
The device uses an N-type channel operating in P-mode configuration.
Is it compliant with environmental or industry standards?
It meets RoHS requirements and conforms to automotive AEC-Q101 criteria.
How many terminals are available for circuit connections?
It provides three pins for gate, drain and source connectivity.
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