제조사부품번호

Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1

RS 제품 번호:: 244-0946
제조사 부품 번호:: IPD80R280P7ATMA1
제조업체:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩6,040.00

추가로 2026년 10월 05일 부터 2,433 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 9	₩6,040.00
10 - 99	₩5,860.00
100 - 249	₩5,740.00
250 - 499	₩5,580.00
500 +	₩5,500.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-0946
제조사 부품 번호:: IPD80R280P7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	900mV
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 900mV
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD80R280P7ATMA1

Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 180A Maximum Continuous Drain Current - IPD80R280P7ATMA1

This MOSFET is a power N-channel transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range for demanding environments and includes an intrinsic diode with defined forward voltage, making it suitable for automotive and industrial power stages.

Features and Benefits:

• 40V maximum drain-source voltage enabling mid-voltage system use
• 180A continuous drain current supporting heavy current loads
• 1.2mΩ low Rds(on) reducing conduction losses
• 81W power dissipation allowing sustained high-power operation
• 80nC gate charge for Rapid switching performance
• Vgs 20V maximum gate rating protecting gate-drive design

Applications

• Suitable for automotive power distribution modules
• Ideal for DC-DC converters in vehicles
• Used for motor-drive stages in electric systems
• Can be used for load switching in power management
• Appropriate for high-current SMD assemblies on boards

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C to +150°C, providing a wide thermal range for harsh environments.

How does the intrinsic diode behave electrically?

The body diode exhibits a forward voltage of 0.9V which affects recirculating current and conduction loss during reverse conduction.

What packaging and mounting considerations apply for PCB design?

It is supplied in a TO-252 package intended for surface mounting, requiring appropriate solder-pad design and thermal management on the PCB.

Is it suitable for automotive-grade projects regarding qualification?

It meets the automotive AEC‑Q101 standard for suitability in automotive electronic applications.