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Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1

RS 제품 번호:: 244-8551
제조사 부품 번호:: IPD80R450P7ATMA1
제조업체:: Infineon

Infineon IPD N-Channel MOSFET, 180 A, 75 V N, 3-Pin TO-252 IPD80R450P7ATMA1

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Subtotal (2 units, in packs of 2)*

₩8,740.00

일시적 품절

2027년 8월 23일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩4,370.00	₩8,740.00
10 - 98	₩4,270.00	₩8,540.00
100 - 248	₩4,170.00	₩8,340.00
250 - 498	₩4,060.00	₩8,120.00
500 +	₩3,960.00	₩7,920.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-8551
제조사 부품 번호:: IPD80R450P7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	75V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 75V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD80R450P7ATMA1

Infineon IPD Series MOSFET, 75V Drain Source Voltage, 180A Continuous Drain Current - IPD80R450P7ATMA1

This MOSFET is a three‑lead N‑channel power transistor designed for high‑current switching in surface‑mounted applications. It operates across a wide temperature range for demanding conditions and is suitable where low conduction losses and robust gate protection are required.

Features and Benefits:

• 75V drain rating enables use in medium‑voltage designs
• 180A continuous current supports heavy‑load switching
• 3mΩ low Rds(on) reduces conduction losses
• 81W power dissipation allows high‑power operation
• 80nC typical gate charge supports fast switching control
• 20V gate tolerance provides gate overvoltage protection

Applications

• Suitable for automotive power‑management modules
• Ideal for synchronous buck converter designs
• Used for high‑current motor drive stages
• Can be used for telecoms power distribution units
• Used with battery management and energy‑storage systems

What thermal extremes can it withstand?

It is rated to function from -55°C up to +150°C under specified conditions.

How is it packaged for PCB assembly?

It is supplied in a TO‑252 surface‑mount package for solder mounting.

What gate drive considerations apply?

The gate can tolerate up to 20V and exhibits a typical total gate charge of 80nC for drive sizing.

Does it comply with automotive reliability standards?

It meets AEC‑Q101 requirements for automotive component qualification.

Are there environmental compliance details?

The device is RoHS‑compliant, restricting hazardous substances.