제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252 AUIRFR024NTRL

RS 제품 번호:: 244-2258
제조사 부품 번호:: AUIRFR024NTRL
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252 AUIRFR024NTRL

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RS 제품 번호:: 244-2258
제조사 부품 번호:: AUIRFR024NTRL
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRFR024NTRL

The Infineon AUIRFR024NTRL Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Planar Technology

Low On-Resistance Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified

Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252 AUIRFR024NTRL

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