Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252
- RS 제품 번호:
- 222-4615
- 제조사 부품 번호:
- AUIRFR9024NTRL
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩6,192,720.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩2,064.24 | ₩6,193,848.00 |
| 15000 + | ₩1,857.44 | ₩5,574,576.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4615
- 제조사 부품 번호:
- AUIRFR9024NTRL
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
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