제조사부품번호

Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL

RS 제품 번호:: 258-0633
제조사 부품 번호:: AUIRFR8403TRL
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩7,444.80

재고있음

2,812 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 8	₩3,722.40	₩7,444.80
10 - 98	₩3,534.40	₩7,068.80
100 - 248	₩3,318.20	₩6,636.40
250 - 498	₩3,092.60	₩6,185.20
500 +	₩2,848.20	₩5,696.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 258-0633
제조사 부품 번호:: AUIRFR8403TRL
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.1mΩ
	Typical Gate Charge Qg @ Vgs	66nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	99W
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.1mΩ
	Typical Gate Charge Qg @ Vgs 66nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 99W
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRFR8403TRL

The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.

Advanced Process Technology

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL

관련된 링크들