Infineon HEXFET Type N-Channel MOSFET & Diode, 62 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR48ZTRL
- RS 제품 번호:
- 220-7347
- 제조사 부품 번호:
- AUIRFR48ZTRL
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩23,185.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 745 | ₩4,637.10 | ₩23,185.50 |
| 750 - 1495 | ₩4,524.00 | ₩22,620.00 |
| 1500 + | ₩4,453.80 | ₩22,269.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 220-7347
- 제조사 부품 번호:
- AUIRFR48ZTRL
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 91W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 91W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon AUIRFR48ZTRL specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It is use in Automotive applications and a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
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