Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR9024NTRL

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Subtotal (1 pack of 10 units)*

₩22,447.20

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  • 최종적인 3,140 개 unit(s)이 배송 준비 됨
Units
Per unit
Per Pack*
10 - 10₩2,244.72₩22,447.20
20 - 90₩2,205.24₩22,052.40
100 - 240₩2,165.76₩21,657.60
250 - 490₩2,126.28₩21,262.80
500 +₩2,088.68₩20,886.80

*price indicative

Packaging Options:
RS Stock No.:
222-4616
Mfr. Part No.:
AUIRFR9024NTRL
Brand:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.18mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

38W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Width

6.73 mm

Length

6.22mm

Height

2.39mm

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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