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Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

RS 제품 번호:: 244-0943
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩3,919,800.00

일시적 품절

2026년 5월 01일 부터 배송

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수량	한팩당	릴당*
2500 - 2500	₩1,567.92	₩3,921,680.00
5000 - 5000	₩1,537.84	₩3,843,190.00
7500 +	₩1,505.88	₩3,766,580.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-0943
제조사 부품 번호:: IPD65R225C7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.2mΩ
	Channel Mode	N
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.2mΩ
	Channel Mode N
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD65R225C7ATMA1

The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

650V voltage

Revolutionary Best-in-Class RDS (on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Improved safety margin and suitable for both SMPS and Solar Inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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